Vdc) I BL nadc Collector Cutoff Current (V CE = Vdc, V EB = 3. Vdc Base Cutoff Current (V CE = Vdc, V EB = 3. 8 1 Publication Order Number: N393/DĢ N393, ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note ) (I C = madc, I B = ) V (BR)CEO 4 Vdc CollectorBase Breakdown Voltage (I C = Adc, I E = ) V (BR)CBO 6 Vdc EmitterBase Breakdown Voltage (I E = Adc, I C = ) V (BR)EBO 6. Semiconductor Components Industries, LLC, 1 August, 1 Rev.

*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TO9 CASE 9 STYLE 1 BASE COLLECTOR 3 1 EMITTER STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL AMMO PACK MARKING DIAGRAMS N 39x YWW x = 3 or 4 Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Indicates Data in addition to JEDEC Requirements. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Functional operation above the Recommended Operating Conditions is not implied. 1 mw mw/ C W mw/ C T J, T stg to +1 C THERMAL CHARACTERISTICS (Note 1) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA C/W Thermal Resistance, JunctiontoCase R JC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Vdc Collector Current Continuous I C madc Total Device T A = C Derate above C Total Device T C = C Derate above C Operating and Storage Junction Temperature Range P D 6 P D 1. 1 N393, General Purpose Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 4 Vdc CollectorBase Voltage V CBO 6 Vdc EmitterBase Voltage V EBO 6.

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